inchange semiconductor product specification silicon pnp power transistor 2SA1303 description high collector-emitter breakdown voltage- v (br)ceo = -150v(min) good linearity of h fe complement to type 2sc3284 applications designed for audio and general purpose applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -150 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -5 v i c collector current-continuous -14 a i b b base current-continuous -3 a p c collector power dissipation @ t c =25 125 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor product specification silicon pnp power transistor 2SA1303 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -25ma ; i b = 0 -150 v v ce (sat) collector-emitter saturation voltage i c = -5a; i b = -0.5a b -2.0 v i cbo collector cutoff current v cb = -150v ; i e = 0 -100 a i ebo emitter cutoff current v eb = -5v; i c = 0 -100 a h fe dc current gain i c = -5a ; v ce = -4v 50 180 c ob output capacitance i e = 0 ; v cb = -10v;f= 1.0mhz 400 pf f t current-gain?bandwidth product i e = 2a ; v ce = -12v 50 mhz switching times t on turn-on time 0.25 s t stg storage time 0.85 s t f fall time i c = -5a ,r l = 12 , i b1 = -i b2 = -0.5a,v cc = -60v 0.2 s ? h fe classifications o p y 50-100 70-140 90-180 2
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